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Arc Detection using S-Probe Sensors on 200 mm High Density Plasma (HDP) Chambers »
The industry standard HDP chamber has three RF sources: top, side, and bias. Arcing is a significant issue that results in catastrophic scrap of product when it occurs. Detection is difficult and requires a third party sensor combined with high speed data collection capability. For this application, a third party S-Probe combined with FabGuard® high speed data collection (up to 250 KHz) was used to detect transient arc events and halt chamber processing after a single affected wafer.
The third party S-Probe is an in-situ chamber surface Langmuir probe selected specifically for measuring plasma stability and arc detection in semiconductor plasma environments. The S-Probe is not powered and mounts flush to the HDP chamber wall to minimize process interaction.
Computer that can handle high speed data with:
1. Inside of the FabGuard recipe, a Tool Bin is created to collect the S-Probe signal from the National Instruments board, Figure 1.
2. Create a Fast Signal Bin (Window Range), Figure 2.
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3. Create a non-fast Signal Bin that will count arcs, Figure 3.
4. Create a Real Time Expert System analysis to generate a fault when the arc count is greater than 1, Figure 4. Conditional saving may be setup to save high speed run data to disk only when a fault for arc count occurs.
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Figure 5 shows the arc signal in the summary data space followed by the arc signal with all fast data points plotted.
This arc detection application using FabGuard high speed data analysis is able to detect an arc event within a chamber and halt chamber processing after a single affected wafer.